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美國Trion 離子刻蝕與沉積系統(tǒng)
價 格:詢價
產(chǎn) 地:更新時間:2021-01-19 15:36
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上海非利加實(shí)業(yè)有限公司
聯(lián) 系 人: 上海非利加實(shí)業(yè)有限公司
電 話: 400-006-7520
傳 真: 400-006-7520
配送方式: 上海自提或三方快遞
聯(lián)系我時請說在上海非利加實(shí)業(yè)有限公司上看到的,謝謝!
美***Trion反應(yīng)式離子刻蝕系統(tǒng)及沉積系統(tǒng) | |||||||||||||||||||||||||||||||||||||
Trion始于***九八九年的等離子刻蝕與沉積系統(tǒng)制造商,Trion為化合物半導(dǎo)體、MEMS(微機(jī)電系統(tǒng))、光電器件以及其他半導(dǎo)體市場提供多種設(shè)備。我們的產(chǎn)品在業(yè)內(nèi)以系統(tǒng)占地面積*小、成本低而著稱,且設(shè)備及工藝的可靠性和穩(wěn)定性久經(jīng)考驗。從整套的批量生產(chǎn)用設(shè)備,到簡單的實(shí)驗室研發(fā)用系統(tǒng),盡在Trion。 批量生產(chǎn)用: Titan是***套用于半導(dǎo)體生產(chǎn)的十分緊湊、全自動化、帶預(yù)真空室的等離子系統(tǒng)。 The United States Trion Technology Reactive ion etching (RIE/ICP) system and deposition (PECVD) system
Founded in 1989 as a manufacturer of plasma etching and deposition systems, Trion supplies a wide range of devices to the compound semiconductor, MEMS(micro-electromechanical systems), optoelectronic devices, and other semiconductor markets.Our products are well known in the industry for their minimal system footprint and low cost, as well as the proven reliability and stability of equipment and processes.Trion has everything from a complete set of mass production equipment to a simple laboratory development system.
Mass production: TITAN ion etching and deposition system:
Titan is a very compact, fully automated plasma system with a pre-vacuum chamber for semiconductor production.
Titan has reactive ion etching (RIE) configurations, high-density inductively coupled plasma deposition (HDICP), or plasma-enhanced chemical vapor deposition (PECVD) configurations.A single substrate or substrate (3 "-300mm) with a backing plate can be processed.It also has multi-dimensional batch processing capabilities.Affordable and small footprint.
Etching application: Gallium arsenide, gallium arsenide, gallium nitride, gallium phosphate, indium phosphate, aluminum, silicides, chromium and other materials requiring corrosive and non-corrosive chemical etching.
Application range of sedimentation:
Silicon dioxide, silicon nitride, nitrogen oxides and various other materials. |